PART |
Description |
Maker |
AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM 4M x 4 CMOS DRAM (EDO) Family
|
Integrated Silicon Solution, Inc. Alliance Semiconductor
|
MSC2323258A MSC2323258A-XXBS4 MSC2323258A-XXDS4 |
2097152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO DPDT 10A MINI 24VDC 2097152字32位DRAM模块:快速页面模式型与江
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
|
HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM 1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM 1M x 16 Bit 1k 5 V 50 ns EDO DRAM -1M x 16-Bit Dynamic RAM 1k Refresh 1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
MT4C16270 |
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
|
Micron Technology
|
HYB514405BJL-70 HYB514405BJL-60 HYB514405BJL-50 HY |
1M x 4 Bit EDO DRAM 5 V 70 ns 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
NN518125LJ-70 NN518125LJ-50 NN518125LJ-60 NN518125 |
x8 EDO Page Mode DRAM
|
|
AS4LC4M4883C AS4LC4M4 |
4 meg x 4 DRAM, 3.3V EDO page mode 4 MEG x 4 DRAM 3.3V, EDO PAGE MODE
|
ETC AUSTIN[Austin Semiconductor]
|
IS41LV16100 |
1M x 16 DRAM With EDO Page Mode(3.3V,1Mx16带扩展数据输出页模式动态RAM)
|
Integrated Silicon Solution, Inc.
|
HM5165405AUTT-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Elpida Memory, Inc.
|
HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-7 |
x16 EDO Page Mode DRAM
|
|